GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers
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S. Colino, and S. Taylor, "GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers," Paper 9735, (2017 May.). doi:
S. Colino, and S. Taylor, "GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers," Paper 9735, (2017 May.). doi:
Abstract: With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.
@article{colino2017gan,
author={colino, stephen and taylor, skip},
journal={journal of the audio engineering society},
title={gan fets drive fidelity and efficiency in class-d audio amplifiers},
year={2017},
volume={},
number={},
pages={},
doi={},
month={may},}
@article{colino2017gan,
author={colino, stephen and taylor, skip},
journal={journal of the audio engineering society},
title={gan fets drive fidelity and efficiency in class-d audio amplifiers},
year={2017},
volume={},
number={},
pages={},
doi={},
month={may},
abstract={with the current maturity of class-d audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. silicon mosfets have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. there are some fundamental characteristics of mosfets that degrade sound quality and efficiency. in 2010, the enhancement mode gallium nitride (gan) power fet was introduced by efficient power conversion (epc), providing a large step towards the perfect switch.},}
TY - paper
TI - GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers
SP -
EP -
AU - Colino, Stephen
AU - Taylor, Skip
PY - 2017
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - May 2017
TY - paper
TI - GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers
SP -
EP -
AU - Colino, Stephen
AU - Taylor, Skip
PY - 2017
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - May 2017
AB - With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.
With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.
Authors:
Colino, Stephen; Taylor, Skip
Affiliations:
Efficient Power Conversion Corp., Bear, DE, USA; Elegant Audio Solutions, Austin, TX, USA(See document for exact affiliation information.)
AES Convention:
142 (May 2017)
Paper Number:
9735
Publication Date:
May 11, 2017Import into BibTeX
Subject:
Audio Systems, Design, Amplifiers
Permalink:
http://www.aes.org/e-lib/browse.cfm?elib=18612
