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M. Duraij, NI. EL. Iversen, LA. PR. Petersen, and P. Boström, "Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs," Paper 9378, (2015 October.). doi: M. Duraij, NI. EL. Iversen, LA. PR. Petersen, and P. Boström, "Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs," Paper 9378, (2015 October.). doi:
Abstract: Where high-frequency clocked system switch-mode audio power amplifiers equipped with eGaN-FETs have been introduced in the past years, a novel self-oscillating eGaN-FET equipped amplifier is presented. A 150 Wrms amplifier has been built and tested with regard to performance and efficiency with an idle switching frequency of 2 MHz. The amplifier consists of a power-stage module with a self-oscillating loop and an error-reducing global loop. It was found that an eGaN-FET based amplifier shows promising potential for building high power density audio amplifiers with excellent audio performance. However care must be taken of the effects caused by a higher switching frequency.

@article{duraij2015self-oscillating,
author={duraij, martijn and iversen, niels elkjær and petersen, lars press and boström, patrik},
journal={journal of the audio engineering society},
title={self-oscillating 150 w switch-mode amplifier equipped with egan-fets},
year={2015},
volume={},
number={},
pages={},
doi={},
month={october},} @article{duraij2015self-oscillating,
author={duraij, martijn and iversen, niels elkjær and petersen, lars press and boström, patrik},
journal={journal of the audio engineering society},
title={self-oscillating 150 w switch-mode amplifier equipped with egan-fets},
year={2015},
volume={},
number={},
pages={},
doi={},
month={october},
abstract={where high-frequency clocked system switch-mode audio power amplifiers equipped with egan-fets have been introduced in the past years, a novel self-oscillating egan-fet equipped amplifier is presented. a 150 wrms amplifier has been built and tested with regard to performance and efficiency with an idle switching frequency of 2 mhz. the amplifier consists of a power-stage module with a self-oscillating loop and an error-reducing global loop. it was found that an egan-fet based amplifier shows promising potential for building high power density audio amplifiers with excellent audio performance. however care must be taken of the effects caused by a higher switching frequency.},}

TY - paper
TI - Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs
SP - EP -
AU - Duraij, Martijn
AU - Iversen, Niels Elkjær
AU - Petersen, Lars Press
AU - Boström, Patrik
PY - 2015
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2015 TY - paper
TI - Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs
SP - EP -
AU - Duraij, Martijn
AU - Iversen, Niels Elkjær
AU - Petersen, Lars Press
AU - Boström, Patrik
PY - 2015
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2015
AB - Where high-frequency clocked system switch-mode audio power amplifiers equipped with eGaN-FETs have been introduced in the past years, a novel self-oscillating eGaN-FET equipped amplifier is presented. A 150 Wrms amplifier has been built and tested with regard to performance and efficiency with an idle switching frequency of 2 MHz. The amplifier consists of a power-stage module with a self-oscillating loop and an error-reducing global loop. It was found that an eGaN-FET based amplifier shows promising potential for building high power density audio amplifiers with excellent audio performance. However care must be taken of the effects caused by a higher switching frequency.