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RA. OV. Ploug, A. Knott, and SØ. BA. Poulsen, "GaN Power Stage for Switch Mode Audio Amplification," Paper 9273, (2015 May.). doi: RA. OV. Ploug, A. Knott, and SØ. BA. Poulsen, "GaN Power Stage for Switch Mode Audio Amplification," Paper 9273, (2015 May.). doi:
Abstract: Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET), which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead time and investigation of switching frequency versus audio performance.

@article{ploug2015gan,
author={ploug, rasmus overgaard and knott, arnold and poulsen, søren bang},
journal={journal of the audio engineering society},
title={gan power stage for switch mode audio amplification},
year={2015},
volume={},
number={},
pages={},
doi={},
month={may},} @article{ploug2015gan,
author={ploug, rasmus overgaard and knott, arnold and poulsen, søren bang},
journal={journal of the audio engineering society},
title={gan power stage for switch mode audio amplification},
year={2015},
volume={},
number={},
pages={},
doi={},
month={may},
abstract={gallium nitride (gan) based power transistors are gaining more and more attention since the introduction of the enhancement mode egan field effect transistor (fet), which makes an adaptation from metal-oxide semiconductor (mosfet) to egan based technology less complex than by using depletion mode gan fets. this project seeks to investigate the possibilities of using egan fets as the power switching device in a full bridge power stage intended for switch mode audio amplification. a 50 w 1 mhz power stage was built and provided promising audio performance. future work includes optimization of dead time and investigation of switching frequency versus audio performance.},}

TY - paper
TI - GaN Power Stage for Switch Mode Audio Amplification
SP - EP -
AU - Ploug, Rasmus Overgaard
AU - Knott, Arnold
AU - Poulsen, Søren Bang
PY - 2015
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - May 2015 TY - paper
TI - GaN Power Stage for Switch Mode Audio Amplification
SP - EP -
AU - Ploug, Rasmus Overgaard
AU - Knott, Arnold
AU - Poulsen, Søren Bang
PY - 2015
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - May 2015
AB - Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET), which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead time and investigation of switching frequency versus audio performance.