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J. Lee, H. Kim, K. Cho, and H. Park, "The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET," Paper 9008, (2013 October.). doi: J. Lee, H. Kim, K. Cho, and H. Park, "The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET," Paper 9008, (2013 October.). doi:
Abstract: This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.

@article{lee2013the,
author={lee, jaecheol and kim, haejong and cho, keeyeong and park, haekwang},
journal={journal of the audio engineering society},
title={the audio performance comparison and method of designing switching amplifiers using gan fet},
year={2013},
volume={},
number={},
pages={},
doi={},
month={october},} @article{lee2013the,
author={lee, jaecheol and kim, haejong and cho, keeyeong and park, haekwang},
journal={journal of the audio engineering society},
title={the audio performance comparison and method of designing switching amplifiers using gan fet},
year={2013},
volume={},
number={},
pages={},
doi={},
month={october},
abstract={this paper addresses physical characteristics of fet materials, the method of designing switching amplifiers using gan fet, and the audio performance comparison of silicon and gan fet. the physical characteristics of gan fet are excellent, but there is a technical limitation to apply to consumer electronics. depletion mode gan fet is used in the proposed system. its characteristic is better than enhance mode. but it has the characteristic of normally turn on. to solve this problem, a cascaded gan switch block is used. it is a combination of depletion mode gan and enhanced mode si. the proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.},}

TY - paper
TI - The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET
SP - EP -
AU - Lee, Jaecheol
AU - Kim, Haejong
AU - Cho, Keeyeong
AU - Park, Haekwang
PY - 2013
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2013 TY - paper
TI - The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET
SP - EP -
AU - Lee, Jaecheol
AU - Kim, Haejong
AU - Cho, Keeyeong
AU - Park, Haekwang
PY - 2013
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2013
AB - This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.