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V. Sala, T. Resano, JO. LU. Romeral, JO. MA. Moreno, "Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies," Paper 8720, (2012 October.). doi: V. Sala, T. Resano, JO. LU. Romeral, JO. MA. Moreno, "Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies," Paper 8720, (2012 October.). doi:
Abstract: In the last decade, the Power Amplifier applications have used multilevel diode-clamped-inverter or neutral-point-clamped (DCI-NPC) topologies to present very low distortion at high power. In these applications a lot of research has been done in order to reduce the sources of distortion in the DCI-NPC topologies. One of the most important sources of distortion, and less studied, is the reverse recovery time (trr) of the clamp diodes and MOSFET parasitic diodes. Today, with the emergence of Silicon Carbide (SiC) technologies, these sources of distortion are minimized. This paper presents a comparative study and evaluation of the distortion generated by different combinations of diodes and MOSFETs with Si and SiC technologies in a DCI-NPC multilevel Power Amplifier in order to reduce the distortions generated by the non-idealities of the semiconductor devices.

@article{sala2012evaluation,
author={sala, vicent and resano, jr., tomas and romeral, jose luis and moreno, jose manuel},
journal={journal of the audio engineering society},
title={evaluation of trr distorting effects reduction in dci-npc multilevel power amplifiers by using sic diodes and mosfet technologies},
year={2012},
volume={},
number={},
pages={},
doi={},
month={october},} @article{sala2012evaluation,
author={sala, vicent and resano, jr., tomas and romeral, jose luis and moreno, jose manuel},
journal={journal of the audio engineering society},
title={evaluation of trr distorting effects reduction in dci-npc multilevel power amplifiers by using sic diodes and mosfet technologies},
year={2012},
volume={},
number={},
pages={},
doi={},
month={october},
abstract={in the last decade, the power amplifier applications have used multilevel diode-clamped-inverter or neutral-point-clamped (dci-npc) topologies to present very low distortion at high power. in these applications a lot of research has been done in order to reduce the sources of distortion in the dci-npc topologies. one of the most important sources of distortion, and less studied, is the reverse recovery time (trr) of the clamp diodes and mosfet parasitic diodes. today, with the emergence of silicon carbide (sic) technologies, these sources of distortion are minimized. this paper presents a comparative study and evaluation of the distortion generated by different combinations of diodes and mosfets with si and sic technologies in a dci-npc multilevel power amplifier in order to reduce the distortions generated by the non-idealities of the semiconductor devices.},}

TY - paper
TI - Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies
SP - EP -
AU - Sala, Vicent
AU - Resano, Jr., Tomas
AU - Romeral, Jose Luis
AU - Moreno, Jose Manuel
PY - 2012
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2012 TY - paper
TI - Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies
SP - EP -
AU - Sala, Vicent
AU - Resano, Jr., Tomas
AU - Romeral, Jose Luis
AU - Moreno, Jose Manuel
PY - 2012
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2012
AB - In the last decade, the Power Amplifier applications have used multilevel diode-clamped-inverter or neutral-point-clamped (DCI-NPC) topologies to present very low distortion at high power. In these applications a lot of research has been done in order to reduce the sources of distortion in the DCI-NPC topologies. One of the most important sources of distortion, and less studied, is the reverse recovery time (trr) of the clamp diodes and MOSFET parasitic diodes. Today, with the emergence of Silicon Carbide (SiC) technologies, these sources of distortion are minimized. This paper presents a comparative study and evaluation of the distortion generated by different combinations of diodes and MOSFETs with Si and SiC technologies in a DCI-NPC multilevel Power Amplifier in order to reduce the distortions generated by the non-idealities of the semiconductor devices.