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V. Grifone Fuchs, C. Wegner, S. Neuser, and D. Ehrhardt, "Investigating the Benefit of Silicon Carbide for a Class D Power Stage," Paper 8686, (2012 October.). doi: V. Grifone Fuchs, C. Wegner, S. Neuser, and D. Ehrhardt, "Investigating the Benefit of Silicon Carbide for a Class D Power Stage," Paper 8686, (2012 October.). doi:
Abstract: This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.

@article{grifone fuchs2012investigating,
author={grifone fuchs, verena and wegner, carsten and neuser, sebastian and ehrhardt, dietmar},
journal={journal of the audio engineering society},
title={investigating the benefit of silicon carbide for a class d power stage},
year={2012},
volume={},
number={},
pages={},
doi={},
month={october},} @article{grifone fuchs2012investigating,
author={grifone fuchs, verena and wegner, carsten and neuser, sebastian and ehrhardt, dietmar},
journal={journal of the audio engineering society},
title={investigating the benefit of silicon carbide for a class d power stage},
year={2012},
volume={},
number={},
pages={},
doi={},
month={october},
abstract={this paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. a silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. emending the imperfection of the power stage, silicon carbide transistors bring out high potential for class d audio amplification.},}

TY - paper
TI - Investigating the Benefit of Silicon Carbide for a Class D Power Stage
SP - EP -
AU - Grifone Fuchs, Verena
AU - Wegner, Carsten
AU - Neuser, Sebastian
AU - Ehrhardt, Dietmar
PY - 2012
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2012 TY - paper
TI - Investigating the Benefit of Silicon Carbide for a Class D Power Stage
SP - EP -
AU - Grifone Fuchs, Verena
AU - Wegner, Carsten
AU - Neuser, Sebastian
AU - Ehrhardt, Dietmar
PY - 2012
JO - Journal of the Audio Engineering Society
IS -
VO -
VL -
Y1 - October 2012
AB - This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.