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A Class D Amplifier Using MOSFETs with Reduced Minority Carrier Lifetime

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Design techniques are presented for a 0.5-Mhz class D amplifier using specially processed MOSFETs with ultrafast intrinsic diode recovery characteristics. Design problems and solutions are presented for the power, filter, and modulator stages. Problems and results are discussed using error correction by loop feedback from the output filter and supply feedforward to the modulator stage. An overview is included of power supply issues, including a lightweight power-factor-corrected quasi-resonant switching power supply.

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JAES Volume 39 Issue 9 pp. 650-662; September 1991
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Permalink: http://www.aes.org/e-lib/browse.cfm?elib=5970

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