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A Class D Amplifier Using MOSFETs with Reduced Minority Carrier Lifetime

Design techniques are presented for a 0.5 Mhz Class D amplifier using specially processed MOSFETs with ultra-fast intrinsic diode recovery characteristics. Design problems and solutions are presented for the power, filter and modular stages. Problems and results are discussed using error correction by loop feedback from the output filter and supply feed-forward power factor corrected quasi-resonant switching power supply.

Author: Hancock, Jon
Affiliation: Siemens Components, Santa Clara, CA
AES Convention:89 (September 1990) Paper Number:2958 Import into BibTeX
Subject:Signal Processing

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E-Library Location: (CD aes11)   /pp8690/pp9009/3041.pdf

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