AES Store

Journal Forum

Reflecting on Reflections - June 2014
1 comment

Quiet Thoughts on a Deafening Problem - May 2014
1 comment

Perceptual Effects of Dynamic Range Compression in Popular Music Recordings - January 2014
5 comments

Access Journal Forum

AES E-Library

Design Criteria for Paralleling Power MOS-Transistors

High-power audio amplifiers are often realized as PWM-switching power stages. The applicability of the MOSFET is believed to be the best, because of its lack of storage time and therefore being a very fast switch. But there often occurs the problem, that power-semiconductors don't meet the requirements of the circuit in their specifications. If current is the limiting quantity, paralleling of switches could meet the goal. The idea of doing this, can be derived from the MOSFET, because a single device consists of hundred of cells on one chip. Therefore in this paper the MOSFET will be used as an example, because of its suitability for parelleling among other power semiconductors.

Authors:
Affiliation:
AES Convention: Paper Number:
Publication Date:
Subject:

Click to purchase paper or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member and would like to subscribe to the E-Library then Join the AES!

This paper costs $20 for non-members, $5 for AES members and is free for E-Library subscribers.

Learn more about the AES E-Library

E-Library Location:

Start a discussion about this paper!


 
Facebook   Twitter   LinkedIn   Google+   YouTube   RSS News Feeds  
AES - Audio Engineering Society