AES E-Library

AES E-Library

GaN Power Stage for Switch Mode Audio Amplification

Document Thumbnail

Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET), which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead time and investigation of switching frequency versus audio performance.

Authors:
Affiliations:
AES Convention: Paper Number:
Publication Date:
Subject:
Permalink: http://www.aes.org/e-lib/browse.cfm?elib=17697

Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member and would like to subscribe to the E-Library then Join the AES!

This paper costs $33 for non-members and is free for AES members and E-Library subscribers.

Learn more about the AES E-Library

E-Library Location:

Start a discussion about this paper!


AES - Audio Engineering Society