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Before designing to stabilize circuit drift due to changing temperatures it is helpful and sometimes necessary to understand and explain the physics of the observed drifts. In the case of the Junction Gate FET this enables minimizing of temperature effects using the characteristics of the device itself. It is the purpose of this paper to outline FET temperature characteristics.
Author (s): Sinclair, John C.;
Affiliation:
Zenith Radio Corporation, Chicago, IL
(See document for exact affiliation information.)
AES Convention: 34
Paper Number:557
Publication Date:
1968-04-06
DOI:
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Sinclair, John C.; 1968; FET Temperature Characteristics [PDF]; Zenith Radio Corporation, Chicago, IL; Paper 557; Available from: https://aes.org/publications/elibrary-page/?id=1452
Sinclair, John C.; FET Temperature Characteristics [PDF]; Zenith Radio Corporation, Chicago, IL; Paper 557; 1968 Available: https://aes.org/publications/elibrary-page/?id=1452
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