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Noise Behavior of Paralleled Linear Amplifiers

The noise of paralleled linear amplifiers is comprehensively treated, and practical methods of calculating noise parameters and predicting noise behavior of paralleled amplifiers are shown in comparison with their component single amplifier. Sometimes the paralleling technique can be used to improve the signal-to-noise ratio of the first-stage amplifier. It is shown that paralleling amplifiers does not always improve the signal-to-noise ratio. Conditions for improving the signal-to-noise ratio are shown. As an example, noise parameters, such as noise figure and optimum source impedance, of paralleled field effect transistors are calculated from the device parameters of their component field effect transistors. Calculated and measured values are compared with those of the single field effect transistor.

Author: Matsudaira, T. Ken
Affiliation: Sony Corporation, Technical Development Laboratory, Minatoku, Tokyo, Japan
JAES Volume 22 Issue 8 pp. 602-613; October 1974 Import into BibTeX

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E-Library Location: (CD aes18)   /2001upd1/jrnl6877/1974/7294.pdf

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