The influence of the semiconductor process on the performance of a microphone preamplifier integrated circuit is described. Examples of active devices available in conventional junction isolated and newer complementary bipolar technologies are shown. The availability of such devices influences the electrical design and its complexity. The traditional microphone preamplifier topology is discussed. A new preamplifier gain structure, that extends the dynamic range by lowering the noise floor, is considered and its benefits are demonstrated.

Author: Floru, Fred
Affiliation: THAT Corporation, Milford, MA
AES Conference: UK 16th Conference: Silicon for Audio (April 2001)
Paper Number: uk103
Publication Date: April 1, 2001 Import into BibTeX
Subject: Silicon for Audio
Permalink: https://www.aes.org/e-lib/browse.cfm?elib=10145

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