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A MOSFET Model for the Simulation of Amplifier Nonlinearity

An accurate prediction of the normal working distortion (weak nonlinearity) of a BJT amplifier circuit is demonstrated. It has not been previously possible to extend this technique to power-MOSFET-based circuits owing to the crude models available for these devices. Typical discrepancies between predicted and measured distortion figures are presented. An adaption of an advanced RF MESFET model is presented. This is fitted to silicon medium-power MOSFETs of the type popular for audio applications. The new model equations are conveniently implemented as a SPICE subcircuit macromodel. Comparisons between measured and simulated values show greatly improved prediction of distortion for small-, low-, and large-signal operation.

Authors: Scott, Jonathan; Parker, Anthony
Affiliations: Dept. of Electrical Engineering, University of Sydney, NSW ; Dept. of Electronics, Macquarie University, NSW(See document for exact affiliation information.)
AES Convention:6r (August 1996) Paper Number:4298 Import into BibTeX

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