Power MOSFETs are emerging as the device of choice for high-quality power amplifiers because of their speed, reduced need for protection, and falling cost. A low-distortion power amplifier design is presented which includes output stage error correction to reduce the effect of transconductance droop in the crossover region and thus allow operation at more efficient bias levels.

Author: Cordell, Robert R.
Affiliation: Regional Bell Operating Companies, Central Services Organization, Holmdel, NJ
JAES Volume 32 Issue 1/2 pp. 2-17; February 1984
Publication Date: February 1, 1984 Import into BibTeX
Permalink: https://www.aes.org/e-lib/browse.cfm?elib=4528

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