The paper will discuss the basic physical design differences between the V-FET and the lateral FET. The intrinsic qualities of these devices, such as linearity and freedom from secondary breakdown, and the application of the V-FET to the design of audio amplifiers compared with bipolar devices, will be explained.

Authors: Suwa, Hisashi; Ishitani, Akiyasu
Affiliation: AKIYASU ISHITANI, SEMICONDUCTOR DIVISION, SONY CORPORATION, NEW YORK, NY
AES Convention: 51 (May 1975) Paper Number: 1018
Publication Date: May 1, 1975 Import into BibTeX
Permalink: https://www.aes.org/e-lib/browse.cfm?elib=2415

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