This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.

Authors: Lee, Jaecheol; Kim, Haejong; Cho, Keeyeong; Park, Haekwang
Affiliations: Samsung Electronics Co., Ltd., Suwon, Korea; Samsung Electronics DMC R&D Center, Suwon, Korea(See document for exact affiliation information.)
AES Convention: 135 (October 2013) Paper Number: 9008
Publication Date: October 16, 2013 Import into BibTeX
Subject: Applications in Audio
Permalink: https://www.aes.org/e-lib/browse.cfm?elib=17056

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