Journal Forum

A Meta-Analysis of High Resolution Audio Perceptual Evaluation - June 2016
2 comments

Synthetic Reverberator - January 1960
3 comments

Sound Board: High-Resolution Audio - October 2015
4 comments

Access Journal Forum

AES E-Library

The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET

Document Thumbnail

This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.

Authors:
Affiliations:
AES Convention: Paper Number:
Publication Date:
Subject:
Permalink: http://www.aes.org/e-lib/browse.cfm?elib=17056

Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member and would like to subscribe to the E-Library then Join the AES!

This paper costs $33 for non-members and is temporarily free for AES members.

Learn more about the AES E-Library

E-Library Location:

Start a discussion about this paper!


 
Facebook   Twitter   LinkedIn   Google+   YouTube   RSS News Feeds  
AES - Audio Engineering Society