This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.
Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member and would like to subscribe to the E-Library then Join the AES!
This paper costs $33 for non-members and is free for AES members and E-Library subscribers.