Perceptual Effects of Dynamic Range Compression in Popular Music Recordings - January 2014
Accurate Calculation of Radiation and Diffraction from Loudspeaker Enclosures at Low Frequency - June 2013
New Measurement Techniques for Portable Listening Devices: Technical Report - October 2013
IGFET Strain Transducers Utilizing Piezoelectric Materials
Piezoelectric materials probably comprise the largest single class of the many materials used in the construction of strain transducers. However, most transducers made with piezoelectric materials require external amplification and do not produce a D.C. response to an applied strain. By the proper use of piezoelectric materials in the construction of an insulated-gate field-effect transistor (IGFET), a strain transducer can be constructed which performs both the strain-sensing and amplification functions in one integral device. The advantages of such a device include both fast response to an applied strain and a small, well-defined sensing area. In addition, a device utilizing a piezoelectric semiconductor will give a D.C. response to an applied strain.
Click to purchase paper or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member and would like to subscribe to the E-Library then Join the AES!
This paper costs $20 for non-members, $5 for AES members and is free for E-Library subscribers.