Piezoelectric materials probably comprise the largest single class of the many materials used in the construction of strain transducers. However, most transducers made with piezoelectric materials require external amplification and do not produce a D.C. response to an applied strain. By the proper use of piezoelectric materials in the construction of an insulated-gate field-effect transistor (IGFET), a strain transducer can be constructed which performs both the strain-sensing and amplification functions in one integral device. The advantages of such a device include both fast response to an applied strain and a small, well-defined sensing area. In addition, a device utilizing a piezoelectric semiconductor will give a D.C. response to an applied strain.
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