AES E-Library

AES E-Library

Transistor Microphone

Document Thumbnail

A study was made of various parameters that influence the sensitivity of transistor microphones, namely: the emitter junction depth; the position of the stressing member on the emitter of the transistor; the n-p-n vs the p-n-p transistors; the magnitude of the collector-to-emitter voltage VCE. The highest sensitivity of the microphone is obtained for a transistor which has a shallow emitter (less than 1 micron) and in which the indenter is positioned where the emitter-base junction meets the surface of the transistor, i.e., at the emitter boundary. The p-n-p and n-p-n transistors behave similarly under stress when the stress is applied at the boundary of the emitter. An increase in VCE enhances the sensitivity, but not by a large amount.

Author:
Affiliation:
JAES Volume 13 Issue 3 pp. 207-217; July 1965
Publication Date:
Permalink: http://www.aes.org/e-lib/browse.cfm?elib=1203

Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member and would like to subscribe to the E-Library then Join the AES!

This paper costs $33 for non-members and is free for AES members and E-Library subscribers.

Learn more about the AES E-Library

E-Library Location:

Start a discussion about this paper!


AES - Audio Engineering Society