The results of studying the h parameters of stressed transistors of the 2N706 type are presented. For this transistor type, the stress characteristics can be predicted by knowing the initial parameter values. The optimum stress location on the transistor surface is detrmined for a practical transducer.

Author: Longwell, Thomas F.
Affiliation: Automatic Electric Laboratories, Inc., Northlake, IL
JAES Volume 15 Issue 1 pp. 60-62; January 1967
Publication Date: January 1, 1967 Import into BibTeX
Permalink: https://www.aes.org/e-lib/browse.cfm?elib=1115

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